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0102030405
IKW30N60T TO-247 Modules IGBT High-power Inverter Welding Machine With Transistor
Product Technology and Advantages
IKW30N60T is a 600V IGBT (Insulated Gate Bipolar Transistor) product produced by Infineon Technologies, packaged in TO-247. This product has the following characteristics:
Low saturation voltage drop (VCEsat), with a typical value of 1.5V.
The maximum junction temperature is 175 ° C.
The short-circuit withstand time is 5 microseconds.
Designed for frequency converters and uninterruptible power supplies (UPS).
Adopting TRENCHSTOP ™ With Fieldstop technology, it provides compact parameter distribution, high robustness, temperature stable behavior, high switching speed, and low VCE (sat).
Having a positive temperature coefficient, it is convenient for parallel switching.
Low electromagnetic interference (EMI) and low gate charge.
A very soft and fast recovery anti parallel emitter control diode.
Validate the target application according to JEDEC standards.
Lead free coating, compliant with RoHS standards.
Product Manufacturing Process
The maximum rated values of IKW30N60T include:
The collector emitter voltage (VCE) is 600V.
The DC collector current (IC) is 45A at 25 ° C and 39A at 100 ° C.
The pulse collector current (ICpulses) is 90A.
The gate emitter voltage (VGE) is ± 20V.
The short-circuit withstand time is 5 microseconds.
The power dissipation (Ptot) is 187W at 25 ° C.
The collector emitter breakdown voltage (V (BR) C) is 600V.
The collector emitter saturation voltage (VCE (sat)) is 1.5V at 25 ° C and 1.9V at 175 ° C.
The forward voltage (VF) of the diode is 1.65V at 25 ° C and 1.6V at 175 ° C.
The gate emitter threshold voltage (VGE (th)) is between 4.1V and 5.7V.
The zero gate voltage collector current (ICE (S)) is 40 µ A at 25 ° C and 2000 µ A at 175 ° C.
The conduction delay time (td (on)) is 23ns.
The rise time (tr) is 21 ns.
The shutdown delay time (td (off)) is 254ns.
The descent time (tf) is 46ns.
The conduction energy (Eon) is 0.69mJ.
The energy off (Eoff) is 0.77mJ.
The total switch energy (Ets) is 1.46mJ.
Product Application Areas
IKW30N60T is a high-performance power MOSFET produced by Infineon, featuring low on resistance, high temperature tolerance, fast switching characteristics, and high reliability.
1.Power supply: IKW30N60T can be used in circuits such as switching power supplies, inverters, and DC-DC converters to provide stable power output.
2.Motor drive: In motor drive systems such as electric vehicles, industrial robots, wind turbines, etc., the IKW30N60T achieves efficient motor control and power conversion.
3.Lighting application: In LED lighting systems, IKW30N60T can be used for driving circuits and power control, improving the energy efficiency and stability of the lighting system.
4.Industrial Automation: IKW30N60T can be used in industrial automation equipment, such as PLC control systems, sensor drivers, etc., to improve equipment performance and reliability.
Product After-Sales Service
Qur Modules Systems inspection procedure includes
1.Label verification according to data sheet. Make sure Logo, PN, D/C, LOT No, MSL, RoHS etc on the label are correct.
2.Packing Condition Inspection and make sure all products are well anti-static sealed.
3.Extensive views like printing and Pin checking under microscope for quality detection.
4.Conduct additional test like electrical testing or other technical testing for further guarantee via our in-house, certified test labs.
5.Digital photos of all outgoing Integrated Circuit Systems parts.
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